Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-01
2005-02-01
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S411000, C438S216000, C438S261000, C438S140000, C438S454000
Reexamination Certificate
active
06849908
ABSTRACT:
A good interface characteristic can be maintained, and a leakage current of a dielectric film can be decreased. A semiconductor device according to one aspect of the present invention includes: a semiconductor substrate; a gate dielectric film containing at least nitrogen and a metal, the gate dielectric film being formed on the semiconductor substrate, and including a first layer region contacting the semiconductor substrate, a second layer region located at a side opposite to that of the first layer region in the gate dielectric film, and a third layer region located between the first and second layer regions, a maximum value of a nitrogen concentration in the third layer region being higher than maximum values thereof in the first and second layer regions; a gate electrode contacting the second layer region; and a pair of source and drain regions formed at both sides of the gate dielectric film in the semiconductor substrate.
REFERENCES:
patent: 6020243 (2000-02-01), Wallace et al.
Hirano Izumi
Koyama Masato
Nishiyama Akira
Abraham Fetsum
Kabushiki Kaisha Toshiba
LandOfFree
Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3472312