Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-02-22
2005-02-22
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S758000, C257S369000
Reexamination Certificate
active
06858934
ABSTRACT:
A method for making a flexible metal silicide local interconnect structure. The method includes forming an amorphous or polycrystalline silicon layer on a substrate including at least one gate structure, forming a layer of silicon nitride over the silicon layer, removing a portion of the silicon nitride layer, oxidizing the exposed portion of the silicon layer, removing the remaining portion of the silicon nitride layer, optionally removing the oxidized silicon layer, forming a metal layer over the resulting structure, annealing the metal layer in an atmosphere comprising nitrogen, and removing any metal nitride regions. The local metal silicide interconnect structure may overlie the at least one gate structure.
REFERENCES:
patent: 4103415 (1978-08-01), Hayes
patent: 4305200 (1981-12-01), Fu et al.
patent: 4682404 (1987-07-01), Miller et al.
patent: 4975756 (1990-12-01), Haken et al.
patent: 5340761 (1994-08-01), Loh et al.
patent: 5341016 (1994-08-01), Prall et al.
patent: 5360757 (1994-11-01), Lage
patent: 5387535 (1995-02-01), Wilmsmeyer
patent: 5482895 (1996-01-01), Hayashi et al.
patent: 5483104 (1996-01-01), Godinho et al.
patent: 5496750 (1996-03-01), Moslehi
patent: 5568065 (1996-10-01), Wert et al.
patent: 5589415 (1996-12-01), Blanchard
patent: 5605853 (1997-02-01), Yoo et al.
patent: 5612243 (1997-03-01), Verrett
patent: 5620919 (1997-04-01), Godinho et al.
patent: 5654240 (1997-08-01), Lee et al.
patent: 5656861 (1997-08-01), Godinho et al.
patent: 5668065 (1997-09-01), Lin
patent: 5670425 (1997-09-01), Schinella et al.
patent: 5756394 (1998-05-01), Manning
patent: 5846881 (1998-12-01), Sandhu et al.
patent: 5913139 (1999-06-01), Hashimoto et al.
patent: 5946595 (1999-08-01), Doan et al.
patent: 5981380 (1999-11-01), Trivedi et al.
patent: 6060389 (2000-05-01), Brennan et al.
patent: 6083847 (2000-07-01), Kuo
patent: 6107154 (2000-08-01), Lin
patent: 6117761 (2000-09-01), Manning
patent: 6249015 (2001-06-01), Matsuo et al.
patent: 6258714 (2001-07-01), Shrivastava
patent: 6436805 (2002-08-01), Trivedi
patent: 59072741 (1984-04-01), None
Thomas E. Tang et al.,Titanium Nitride Local Interconnect Technology For VLSI, IEEE Transactions On Electron Devices. vol. ED-34, No. 3. Mar. 1987.
IBM Technical Disclosure Bulletin NN9205414, 6 pages, May 1, 1992.
IBM Technical Disclosure Bulletin NN9107269, 5 pages, Jul. 1, 1991.
IBM Technical Disclosure Bulletin NA85035870, 7 pages, Mar. 1, 1985.
Tang Sanh D.
Violette Michael P.
Lee Eddie
Micro)n Technology, Inc.
Owens Douglas W.
TraskBritt
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