Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-10-18
2005-10-18
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S308000
Reexamination Certificate
active
06955956
ABSTRACT:
In a laser irradiation apparatus having low running costs as compared with a conventional apparatus and a laser beam irradiation method using the same, a crystalline semiconductor film having a crystal grain of a grain size equivalent to or larger than a conventional one is formed, and a TFT is manufactured by using the crystalline semiconductor film, so that the TFT enabling a high speed operation is realized. In a case where a laser beam of a short output time from a solid laser as a light source is irradiated to a semiconductor film, another laser beam is delayed from one laser beam, and the laser beams are synthesized to be irradiated to the semiconductor film, so that a cooling speed of the semiconductor film is made gentle, and it becomes possible to form the crystalline semiconductor film having the crystal grain of the grain size equivalent to or larger than that in a case where a laser beam having a long output time is irradiated to the semiconductor film. By manufacturing a TFT using such a crystalline semiconductor film, the TFT enabling the high speed operation can be realized.
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Nakajima Setsuo
Tanaka Koichiro
Booth Richard A.
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Semiconductor Energy Laboratory Co,. Ltd.
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