Semiconductor switching device

Details Semiconductor switching device Semiconductor switching device

2005-06-07

2005-06-07

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257S272000, C257S287000

Reexamination Certificate

active

06903426

ABSTRACT:
A semiconductor switching device includes two FETs with different device characteristics, a common input terminal, and two output terminals. A signal transmitting FET has a gate width of 500 μm and a signal receiving FET has a gate width of 400 μm. A resistor connecting a gate electrode and a control terminal of the signal transmitting FET is tightly configured to provide expanding space for the FET. Despite the reduced size, the switching device can allow a maximum power of 22.5 dBm to pass through because of the asymmetrical device design. The switching device operates at frequencies of 2.4 GHz or higher without use of shunt FET.

REFERENCES:
patent: 5345194 (1994-09-01), Nagasako
patent: 2002/0024375 (2002-02-01), Asano et al.
patent: 2002/0145169 (2002-10-01), Asano et al.
patent: 2002/0187755 (2002-12-01), Asano et al.
NEC Corp., “C To X Band Amplifier C To X Band OSC N-Channel GaAs,” Aug. 1994.

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