Method of forming metal plug

Details Method of forming metal plug Method of forming metal plug

2005-11-01

2005-11-01

Nguyen, Ha Tran (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S630000, C438S637000, C438S649000, C438S586000, C438S664000

Reexamination Certificate

active

06960525

ABSTRACT:
A method of forming a metal plug. First, a dielectric layer is formed on a substrate. Next, a patterned hard mask is formed on the dielectric layer. The dielectric layer is etched through the patterned hard mask to form a contact hole in the dielectric layer so as to expose parts of the substrate. An isolated layer is formed on the patterned hard mask. A barrier is then formed conformally on the isolated layer and the exposed substrate of the contact hole. A metal layer is formed to fill the contact hole and cover the barrier. A thermal treatment is performed to form a silicide between the barrier layer and the substrate. Finally, parts of the metal layer, barrier, isolated layer, and patterned hard mask are removed. The metal plug with a planar surface is thus formed in the contact hole.

REFERENCES:
patent: 6461963 (2002-10-01), Givens et al.

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