Semiconductor device, and method of forming the same

Details Semiconductor device, and method of forming the same Semiconductor device, and method of forming the same

2005-02-01

2005-02-01

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Charge transfer device

C438S308000

Reexamination Certificate

active

06849482

ABSTRACT:
In order to realize a semiconductor device of enhanced TFT characteristics, a semiconductor thin film is selectively irradiated with a laser beam at the step of crystallizing the semiconductor thin film by the irradiation with the laser beam. By way of example, only driver regions (103in FIG.1) are irradiated with the laser beam in a method of fabricating a display device of active matrix type. Thus, it is permitted to obtain the display device (such as liquid crystal display device or EL display device) of high reliability as comprises the driver regions (103) made of crystalline semiconductor films, and a pixel region (102) made of an amorphous semiconductor film.

REFERENCES:
patent: 4599133 (1986-07-01), Miyao et al.
patent: 5432122 (1995-07-01), Chae
patent: 5569610 (1996-10-01), Zhang et al.
patent: 5614733 (1997-03-01), Zhang et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5648277 (1997-07-01), Zhang et al.
patent: 5648662 (1997-07-01), Zhang et al.
patent: 5696011 (1997-12-01), Yamazaki et al.
patent: 5756364 (1998-05-01), Tanaka et al.
patent: 5764320 (1998-06-01), Konuma et al.
patent: 5783468 (1998-07-01), Zhang et al.
patent: 5803965 (1998-09-01), Yoon
patent: 5811328 (1998-09-01), Zhang et al.
patent: 5821137 (1998-10-01), Wakai et al.
patent: 5858822 (1999-01-01), Yamazaki et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5943593 (1999-08-01), Noguchi et al.
patent: 5946561 (1999-08-01), Yamazaki et al.
patent: 6008101 (1999-12-01), Tanaka et al.
patent: 6013542 (2000-01-01), Yamazaki et al.
patent: 6080643 (2000-06-01), Noguchi et al.
patent: 6124155 (2000-09-01), Zhang et al.
patent: 6160272 (2000-12-01), Arai et al.
patent: 6166399 (2000-12-01), Zhang et al.
patent: 6242289 (2001-06-01), Nakajima et al.
patent: 6277679 (2001-08-01), Ohtani
patent: 6335213 (2002-01-01), Zhang et al.
patent: 6494162 (2002-12-01), Zhang et al.
patent: 63-223788 (1988-09-01), None
patent: 1-045162 (1989-02-01), None
patent: 4-124813 (1992-04-01), None
patent: 7-130652 (1995-05-01), None
English abstract re Japanese patent application No. JP 62-223788, published Sep. 19, 1988.
English abstract re Japanese patent application No. JP 1-045162, published Feb. 17, 1989.
English abstract re Japanese patent application No. JP 7-130652, published May 19, 1995.

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