Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2005-11-01
2005-11-01
Nguyen, Cuong (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S918000
Reexamination Certificate
active
06960498
ABSTRACT:
A doping method capable of controlling a dose amount in response to a change the ratio in ion species during a doping process, a control system for controlling a doping amount, and a doping apparatus having a control system are provided. An ion current value of a specific ion in an ion beam is measured. There is an ion detector that measures an ion current value of a specific ion in an ion beam and enters the obtained monitor signal into a control means. Set data for setting a predetermined dose amount is entered into the control means, convert data for obtaining an actual dose amount from the monitor signal is entered into the control means by a memory means. The control means performs data processing on the basis of the input monitor signal and the convert data, a control signal for obtaining the predetermined dose amount is entered from the control means to the dose amount control system to dope the controlled ion beam into the target material.
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Costellia Jeffrey L.
Nguyen Cuong
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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