Thin film magnetic memory device suppressing internal...

Static information storage and retrieval – Systems using particular element – Magnetic thin film

Reexamination Certificate

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C365S230060

Reexamination Certificate

active

06856538

ABSTRACT:
A write drive circuit provided for every write word line supplies a data write current to a write word line of a selected row, and supplies a magnetic-field canceling current to a write word line of an adjacent row in the opposite direction to that of the data write current. In each write drive circuit, the data write current is supplied in response to turning-ON of first and second driver transistors, and the magnetic-field canceling current is supplied in response to turning-ON of the second driver transistor.

REFERENCES:
patent: 5504699 (1996-04-01), Goller et al.
patent: 6501679 (2002-12-01), Hidaka
U.S. Appl. No. 09/982,936, filed Oct. 22, 2001.
U.S. Appl. No. 10/223,290, filed Aug. 20, 2002.
U.S. Appl. No. 10/227,452, filed Aug. 26, 2002.
Scheuerlein et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, ISSCC Digest of Technical Papers, TA7.2, Feb. 2000, pp 94-95, 128-129, 409-410.
Durlam et al., “Nonvolatile RAM Based on Magnetic Tunnel Junction Elements”, ISSCC Digest of Technical Papers, TA7.3, Feb. 2000, pp. 96-97, 130-131, 410-411.
Naji et al., “A 256kb 3.0V 1T1MT J Nonvolatile Magnetoresistive RAM”, ISSCC Digest of Technical Papers, TA7.6, Feb. 2001, pp. 94-95, 122-123, 404-405, 438.

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