Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-02-22
2005-02-22
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S686000
Reexamination Certificate
active
06858536
ABSTRACT:
The present invention relates to an electrically conductive film stack for semiconductors and methods and apparatus for providing same. A film stack comprising a first layer of a platinum-rhodium alloy deposited by metal organic chemical vapor deposition (MOCVD) in the presence of a reducer, such as hydrogen (H2) gas, and a second layer of the platinum-rhodium alloy deposited in the presence of an oxidizing gas, such as ozone (O3), provides an electrical conductor that is also a relatively good barrier to oxygen. The platinum-rhodium film stack can be used as an electrode or capacitor plate for a capacitor with a high-k dielectric material. The electrode formed with alternating reducing and oxidizing agents produces a rough surface texture, which enhances the memory cell capacitance.
REFERENCES:
patent: 5504041 (1996-04-01), Summerfelt
patent: 5576928 (1996-11-01), Summerfelt et al.
patent: 5619393 (1997-04-01), Summerfelt et al.
patent: 5622893 (1997-04-01), Summerfelt et al.
patent: 5729054 (1998-03-01), Summerfelt et al.
patent: 5807774 (1998-09-01), Desu et al.
patent: 5844318 (1998-12-01), Sandhu et al.
patent: 5874364 (1999-02-01), Nakabayashi et al.
patent: 5963835 (1999-10-01), Sandhu et al.
patent: 5989338 (1999-11-01), DeBoer et al.
patent: 6090701 (2000-07-01), Hasunuma et al.
patent: 6177351 (2001-01-01), Beratan et al.
patent: 6482736 (2002-11-01), Basceri et al.
Kodas et al. “The Chemistry of Metal CVD” (Jan. 1994) Chapter 8, pp. 397-398 and 408.
Koops et al. “Fabrication and Characterization of Platinum Nanocrystalline Material Grown By Electron-Beam Induced Deposition”—J. Vac. Sci Technol. B 13(6), Nov./Dec. 1995, pp. 2400-2403.
Aoyama et al. “Ru Electrode Deposited by Sputtering in Ar/O2Mixture Ambient”—J. Appl. Phys. Vol 37 (1998) pp. 5701-5707.
Aoyama et al. “Interfacial Layers Between Sl and Ru Films Deposited By Sputtering in Ar/O2Mixture Ambient”—1998 Publication Board, Japanese Journal of Applied Physics, pp. L242-244.
Sandhu Gurtej S.
Yang Haining
Knobbe Martens Olson & Bear LLP
Micro)n Technology, Inc.
Tsai H. Jey
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