Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-01
2005-02-01
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S301000, C257S328000, C257S329000, C257S330000, C257S331000, C257S332000, C257S333000, C257S334000, C257S908000
Reexamination Certificate
active
06849893
ABSTRACT:
A circuit structure has at least two etching trenches disposed at sidewalls of a silicon block left behind during the etching of the structure. The etching trenches are disposed at angles with respect to one another that are prescribed by the form of the silicon block left behind. Semiconductor layer structures which can interact with one another diagonally across are in each case accommodated in the etching trenches. In this case, the function of the entire circuit structure results from the interaction of the layer structures disposed in the various etching trenches.
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Greenberg Laurence A.
Infineon - Technologies AG
Mayback Gregory L.
Soward Ida M.
Stemer Werner H.
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