Semiconductor device having an improved construction in the...

Details Semiconductor device having an improved construction in the... Semiconductor device having an improved construction in the...

2005-02-22

2005-02-22

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S774000

Reexamination Certificate

active

06858936

ABSTRACT:
A semiconductor device comprises a semiconductor substrate, an interlayer insulating film including a first insulating film formed above the substrate and having a relative dielectric constant smaller than 2.5 and a second insulating film formed to cover the first insulating film and having a relative dielectric constant larger than that of the first insulating film, and a buried wiring formed within the interlayer insulating film. A bottom portion of the second insulating film is buried in the first insulating film at a number of points.

REFERENCES:
patent: 6498384 (2002-12-01), Marathe
patent: 2-130828 (1990-05-01), None
patent: 6-112204 (1994-04-01), None
patent: 2000-294634 (2000-10-01), None
patent: 2001-316222 (2001-11-01), None
patent: 2001-358218 (2001-12-01), None

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