Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-28
2005-06-28
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S306000, C257S310000, C257S522000, C257S535000, C257S637000, C257S638000, C257S752000
Reexamination Certificate
active
06911686
ABSTRACT:
There is provided a semiconductor device which is manufactured via steps of forming a capacitor which is obtained by forming in sequence an upper electrode, a dielectric film formed of ferroelectric material or high-dielectric material, and a lower electrode on a semiconductor substrate, then forming an interlayer insulating film on the capacitor, then planarizing a surface of the interlayer insulating film by the CMP polishing, then removing a moisture attached to a surface of the interlayer insulating film or a moisture contained in the interlayer insulating film by applying the plasma annealing using an N2O gas, and then forming a redeposited interlayer film on the interlayer insulating film.
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Fujitsu Limited
Warren Matthew E.
Westerman Hattori Daniels & Adrian LLP
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