Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-07
2005-06-07
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S291000, C257S292000, C257S461000, C257S462000, C257S258000, C257S257000
Reexamination Certificate
active
06903395
ABSTRACT:
A semiconductor device including an overcoat layer of a transparent material disposed on a substrate, a projection formed on the overcoat layer, a convex intralayer lens of an inorganic material formed to include the projection as a core and a transparent film with a flat top surface formed on the convex intralayer lens.
REFERENCES:
patent: 5371397 (1994-12-01), Maegawa et al.
patent: 5877040 (1999-03-01), Park et al.
patent: 6030852 (2000-02-01), Sano et al.
patent: 6188094 (2001-02-01), Kochi et al.
patent: 6313467 (2001-11-01), Shafer et al.
patent: 60-262458 (1985-12-01), None
patent: 1-309370 (1989-12-01), None
patent: 3-190168 (1991-08-01), None
patent: 3-238863 (1991-10-01), None
patent: 03-238863 (1991-10-01), None
patent: 04-012568 (1992-01-01), None
patent: 11-40787 (1999-02-01), None
patent: 11040787 (1999-02-01), None
Agoh Fujio
Nakai Jun-ichi
Conlin David G.
Edwards & Angell LLP
Neuner George W.
Sharp Kabushiki Kaisha
Tran Minhloan
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