Semiconductor device including interlayer lens

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S291000, C257S292000, C257S461000, C257S462000, C257S258000, C257S257000

Reexamination Certificate

active

06903395

ABSTRACT:
A semiconductor device including an overcoat layer of a transparent material disposed on a substrate, a projection formed on the overcoat layer, a convex intralayer lens of an inorganic material formed to include the projection as a core and a transparent film with a flat top surface formed on the convex intralayer lens.

REFERENCES:
patent: 5371397 (1994-12-01), Maegawa et al.
patent: 5877040 (1999-03-01), Park et al.
patent: 6030852 (2000-02-01), Sano et al.
patent: 6188094 (2001-02-01), Kochi et al.
patent: 6313467 (2001-11-01), Shafer et al.
patent: 60-262458 (1985-12-01), None
patent: 1-309370 (1989-12-01), None
patent: 3-190168 (1991-08-01), None
patent: 3-238863 (1991-10-01), None
patent: 03-238863 (1991-10-01), None
patent: 04-012568 (1992-01-01), None
patent: 11-40787 (1999-02-01), None
patent: 11040787 (1999-02-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device including interlayer lens does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device including interlayer lens, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including interlayer lens will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3463339

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.