Method of wet etching a silicon and nitrogen containing...

Details Method of wet etching a silicon and nitrogen containing... Method of wet etching a silicon and nitrogen containing...

2005-05-03

2005-05-03

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C257SE21228, C257SE21251, C257SE21490

Reexamination Certificate

active

06887796

ABSTRACT:
The invention relates to a method of manufacturing a semiconductor device comprising the step of removing a silicon and nitrogen containing material by means of wet etching with an aqueous solution comprising hydrofluoric acid in a low concentration, the aqueous solution being applied under elevated pressure to reach a temperature above 100° C.

REFERENCES:
patent: 6333547 (2001-12-01), Tanaka et al.
patent: 20030087179 (2003-05-01), Iwasaki

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