Semiconductor device with high mobility and high speed

Details Semiconductor device with high mobility and high speed Semiconductor device with high mobility and high speed

2005-02-15

2005-02-15

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S368000

Reexamination Certificate

active

06855987

ABSTRACT:
The semiconductor device comprises a semiconductor layer18formed on an insulation layer16, a gate electrode22formed on the semiconductor layer with a gate insulation film20formed therebetween, a source/drain region24formed on the semiconductor layer on both sides of the gate electrode, and a semiconductor region14buried in the insulation layer16in a region below the gate electrode.

REFERENCES:
patent: 6180985 (2001-01-01), Yeo
patent: 6281054 (2001-08-01), Yeo
patent: 6469350 (2002-10-01), Clark et al.
patent: 6538916 (2003-03-01), Ohsawa
patent: 6586284 (2003-07-01), Kim
patent: 8-316335 (1996-11-01), None
Ken Uchida et al., The division of the Japan Society of Applied Physics, Silicon Technology, No. 35, pp. 88-93, Jan. 22, 2002.

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