Light emitting apparatus and method for manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices

Reexamination Certificate

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Details

C257S079000, C438S149000, C438S151000, C438S164000

Reexamination Certificate

active

06903377

ABSTRACT:
The purpose of the invention is to improve reliability of a light emitting apparatus including a TFT and organic light emitting elements. The light emitting apparatus according to the invention having a thin film transistor and a light emitting element includes a first inorganic insulation layer on the lower surface of a semiconductor layer, a second inorganic insulation layer on the upper surface of a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, a wiring layer extending on the third inorganic insulation layer, a second organic insulation layer overlapped with the end of the wiring layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the wiring layer, a cathode layer formed in contact with the wiring layer and having side end overlapped with the fourth inorganic insulation layer, and an organic compound layer formed in contact with the cathode layer and the fourth inorganic insulation layer and including light emitting material, and an anode layer formed in contact with the organic compound layer including the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.

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