Methods of fabricating delta doped silicon carbide...

Details Methods of fabricating delta doped silicon carbide... Methods of fabricating delta doped silicon carbide...

2005-06-07

2005-06-07

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S172000, C438S571000

Reexamination Certificate

active

06902964

ABSTRACT:
The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a delta doped silicon carbide MESFET having a source, a drain and a gate. The gate is situated between the source and the drain and extends into a doped channel layer of a first conductivity type. Regions of silicon carbide adjacent to the source and the drain extend between the source and the gate and the drain and the gate, respectively. The regions of silicon carbide have carrier concentrations that are greater than a carrier concentration of the doped channel layer and are spaced apart from the gate.

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