Semiconductor on insulator device

Details Semiconductor on insulator device Semiconductor on insulator device

2005-06-21

2005-06-21

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S348000

Reexamination Certificate

active

06909155

ABSTRACT:
An N-channel MOS field-effect transistor on an SOI substrate including a source electrode, drain and gate electrodes both disposed via a field oxide film, a gate oxide film, a high concentration P-type layer, a high concentration N-type layer contacting the source electrode and the gate oxide film, a high concentration N-type layer contacting the drain electrode, a p-body layer contacting the high concentration P-type and N-type layers and the gate oxide film. In this transistor, an N-type layer with a concentration higher than that of a drain region contacting the p-body layer constitutes a region covering at most 95% of the source-drain distance. Further, an N-type region having a concentration from 3×1016/cm3to 1×1022/cm3is provided near a buried oxide film under the drain electrode.

REFERENCES:
patent: 5654561 (1997-08-01), Watabe
patent: 5777365 (1998-07-01), Yamaguchi et al.
patent: 6307224 (2001-10-01), Shirai
patent: 2002/0030238 (2002-03-01), Nakamura et al.
patent: 8-181321 (1996-07-01), None
patent: 2001102586 (2001-04-01), None

Affiliated with

Also associated with

Rating

Semiconductor on insulator device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor on insulator device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor on insulator device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3460824