Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-08-09
2005-08-09
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S240000, C438S785000
Reexamination Certificate
active
06927179
ABSTRACT:
A method of forming a high dielectric oxide film conventionally formed using a post formation oxygen anneal to reduce the leakage current of such film includes forming a high dielectric oxide film on a surface. The high dielectric oxide film has a dielectric constant greater than about 4 and includes a plurality of oxygen vacancies present during the formation of the film. The high dielectric oxide film is exposed during the formation thereof to an amount of atomic oxygen sufficient for reducing the number of oxygen vacancies and eliminating the post formation oxygen anneal of the high dielectric oxide film. Further, the amount of atomic oxygen used in the formation method may be controlled as a function of the amount of oxygen incorporated into the high dielectric oxide film during the formation thereof or be controlled as a function of the concentration of atomic oxygen in a process chamber in which the high dielectric oxide film is being formed. An apparatus for forming the high dielectric oxide film is also described.
REFERENCES:
patent: 4261698 (1981-04-01), Carr et al.
patent: 4691662 (1987-09-01), Roppel et al.
patent: 5261961 (1993-11-01), Takasu et al.
patent: 5312783 (1994-05-01), Takasaki et al.
patent: 5395771 (1995-03-01), Nakato
patent: 5468687 (1995-11-01), Carl et al.
patent: 5470398 (1995-11-01), Shibuya et al.
patent: 5486488 (1996-01-01), Kamiyama
patent: 5525156 (1996-06-01), Manada et al.
patent: 5702562 (1997-12-01), Wakahara
patent: 6325017 (2001-12-01), DeBoer et al.
patent: 6461982 (2002-10-01), DeBoer et al.
patent: 2002/0187654 (2002-12-01), DeBoer et al.
patent: 0 030 798 (1981-06-01), None
patent: 0 306 069 (1989-03-01), None
patent: 0 388 957 (1990-09-01), None
patent: 2 194 555 (1988-03-01), None
patent: 4 24922 (1992-01-01), None
patent: 4 115533 (1992-04-01), None
patent: 4 180566 (1992-06-01), None
patent: 8 60347 (1996-03-01), None
Aoyama et al., “Leakage Current Mechanisms of Amorphous and Polycrystalline Ta2O5Films Grown by Chemical Vapor Deposition,”J. Electrochem. Soc., 143(3), 977-983 (1996).
DeBoer Scott J.
Thakur Randhir P. S.
Hoang Quoc
Micro)n Technology, Inc.
Mueting Raasch & Gebhardt, P.A.
Nelms David
LandOfFree
Methods and apparatus for forming a high dielectric film and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods and apparatus for forming a high dielectric film and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods and apparatus for forming a high dielectric film and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3460555