Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-23
2005-08-23
Thompson, Craig A. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
06933580
ABSTRACT:
Metal nitride and metal oxynitride extrusions often form on metal silicides. These extrusions can cause short circuits and degrade processing yields. The present invention discloses a method of selectively removing such extrusions. In one embodiment, a novel wet etch comprising an oxidizing agent and a chelating agent selectively removes the extrusions from a wordline in a memory array. In another embodiment, the wet etch includes a base that adjusts the pH of the etch to selectively remove certain extrusions relative to other substances in the wordline. Accordingly, new metal silicide structures can be used to form novel wordlines and other types of integrated circuits.
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Silicon Processing for the VLSI Era—vol. 1: Process Technology, Stanley Wolf and Richard N. Tauber,Lattice Press, Sunset Beach, California.
Chen Gary
Hu Yongjun Jeff
Li Li
Dolan Jennifer M
Knobbe Martens & Olson Bear LLP.
Micro)n Technology, Inc.
Thompson Craig A.
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