Wet etchant composition and method for etching HfO2 and ZrO2

Details Wet etchant composition and method for etching HfO2 and ZrO2 Wet etchant composition and method for etching HfO2 and ZrO2

2005-11-29

2005-11-29

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S747000, C438S748000, C438S754000, C438S756000

Reexamination Certificate

active

06969688

ABSTRACT:
A wet etchant solution composition and method for etching oxides of hafnium and zirconium including at least one solvent present at greater than about 50 weight percent with respect to an arbitrary volume of the wet etchant solution; at least one chelating agent present at about 0.1 weight percent to about 10 weight percent with respect to an arbitrary volume of the wet etchant solution; and, at least one halogen containing acid present from about 0.0001 weight percent to about 10 weight percent with respect to an arbitrary volume of the wet etchant solution.

REFERENCES:
patent: 6476454 (2002-11-01), Suguro
patent: 6586293 (2003-07-01), Hasegawa
patent: 6743529 (2004-06-01), Saito et al.
patent: 6790782 (2004-09-01), Yang et al.

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