Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-05-17
2005-05-17
Fahmy, Wael (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S648000, C438S649000, C438S683000, C438S685000, C438S687000, C438S937000, C257S765000
Reexamination Certificate
active
06893905
ABSTRACT:
An aluminum-containing film having an oxygen content within the film. The aluminum-containing film is formed by introducing hydrogen gas and oxygen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate. The aluminum-containing film so formed is hillock-free and has low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.
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Raina Kanwal K.
Wells David H.
Fahmy Wael
Rao Shrinivas H.
TraskBritt
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