High voltage withstanding semiconductor device

Details High voltage withstanding semiconductor device High voltage withstanding semiconductor device

2005-10-11

2005-10-11

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S330000, C257S301000, C257S302000, C257S332000

Reexamination Certificate

active

06953968

ABSTRACT:
A semiconductor device of the present invention has an insulating gate type field effect transistor portion having an n-type emitter region (3) and an n−silicon substrate (1), which are opposed to each other sandwiching a p-type body region (2), as well as a gate electrode (5a) which is opposed to p-type body region (2) sandwiching a gate insulating film (4a), and also has a stabilizing plate (5b). This stabilizing plate (5b) is made of a conductor or a semiconductor, is opposed to n−silicon substrate (1) sandwiching an insulating film (4, 4b) for a plate, and forms together with n−silicon substrate (1), a capacitor. This stabilizing plate capacitor formed between stabilizing plate (5b) and n−silicon substrate (1) has a capacitance greater than that of the gate-drain capacitor formed between gate electrode (5a) and n−silicon substrate (1).

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