Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2005-02-22

2005-02-22

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S301000

Reexamination Certificate

active

06858520

ABSTRACT:
A MOS semiconductor device is manufactured by providing a gate electrode on a semiconductor substrate through a silicon oxide film and disposing a resist mask pattern in contact with the silicon oxide film. The resist mask pattern has a fully opened region and a partially opened region disposed between the fully opened region and the gate electrode. The partially opened region has alternating masked portions and portions exposing the silicon oxide film which partly block and partly permit, respectively, the introduction of impurities therethrough. Impurities are selectively introduced into an impurity introduction region of the semiconductor substrate through the fully opened region and the partially opened region of the resist mask pattern to form areas having high and low impurity densities in the impurity introduction region.

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patent: 5142345 (1992-08-01), Miyata
patent: 5457060 (1995-10-01), Chang
patent: 5486716 (1996-01-01), Saito et al.
patent: 5543342 (1996-08-01), Mukai et al.
patent: 5569612 (1996-10-01), Frisina et al.
patent: 5679971 (1997-10-01), Tamba et al.

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