Semiconductor device and method of producing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead

Reexamination Certificate

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C257S315000, C257S324000, C257S390000, C257S672000, C257S696000, C257S730000, C257S735000

Reexamination Certificate

active

06891262

ABSTRACT:
A semiconductor device enabling word lines to be arranged at close intervals, comprising a plurality of memory transistors arranged in an array and a plurality of word lines serving also as gate electrodes of memory transistors in a same row, extending in a row direction, and repeating in a column direction, where insulating films are formed between the plurality of word lines to insulate and isolate the word lines from each other and where a dimension of separation of word lines is defined by the thickness of the insulating films.

REFERENCES:
patent: 5306941 (1994-04-01), Yoshida
patent: 5877537 (1999-03-01), Aoki
patent: 6381166 (2002-04-01), Yoshida et al.
patent: 6765271 (2004-07-01), Iijima
patent: 20010052958 (2001-12-01), Ogawa

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