Non-volatile memory device

Details Non-volatile memory device Non-volatile memory device

2005-11-08

2005-11-08

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S322000, C257S324000, C257S325000, C438S211000, C438S593000

Reexamination Certificate

active

06963104

ABSTRACT:
A non-volatile memory device includes a substrate, an insulating layer, a fin, a number of dielectric layers and a control gate. The insulating layer is formed on the substrate and the fin is formed on the insulating layer. The dielectric layers are formed over the fin and the control gate is formed over the dielectric layers. The dielectric layers may include oxide-nitride-oxide layers that function as a charge storage structure for the memory device.

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