Films doped with carbon for use in integrated circuit...

Details Films doped with carbon for use in integrated circuit... Films doped with carbon for use in integrated circuit...

2005-11-08

2005-11-08

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S309000

Reexamination Certificate

active

06963101

ABSTRACT:
The invention pertains to films comprising silicon, oxygen and carbon and the use of the films in integrated circuit technology, such as capacitor constructions, DRAM constructions, semiconductive material assemblies, etching processes, and methods for forming capacitors, DRAMs and semiconductive material assemblies.

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Research Disclosure 408124 (Apr. 1998).

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