Semiconductor device and portable electronic apparatus

Details Semiconductor device and portable electronic apparatus Semiconductor device and portable electronic apparatus

2005-11-29

2005-11-29

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S368000, C257S369000, C257S371000, C257S374000, C257S506000, C257S392000, C257S314000, C257S355000, C257S341000, C257S401000, C257S296000, C257S390000, C257S342000, C257S391000, C257S510000, C438S199000, C438S221000, C438S223000

Reexamination Certificate

active

06969893

ABSTRACT:
There is provided a semiconductor device of low power consumption and high reliability having DTMOS' and substrate-bias variable transistors, and portable electronic equipment using the semiconductor device. On a semiconductor substrate (11), trilayer well regions (12, 14, 16; 13, 15, 16) are formed, and DTMOS' (29, 30) and substrate-bias variable transistors (27, 28) are provided in the shallow well regions (16, 17). Large-width device isolation regions (181, 182, 183) are provided at boundaries forming PNP, NPN or NPNP structures, where a small-width device isolation region (18) is provided on condition that well regions on both sides are of an identical conductive type. Thus, a plurality of well regions of individual conductive types where substrate-bias variable transistors (27, 28) of individual conductive types are provided can be made electrically independent of one another, allowing the power consumption to be reduced. Besides, the latch-up phenomenon can be suppressed.

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