Compensation semiconductor component

Details Compensation semiconductor component Compensation semiconductor component

2005-03-01

2005-03-01

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S135000, C257S147000, C257S328000, C257S329000, C257S355000, C257S401000

Reexamination Certificate

active

06861706

ABSTRACT:
A compensation semiconductor component has a drift zone formed in a semiconductor body and at least one compensation zone formed in the edge region of the semiconductor body in the drift zone. The compensation zone is doped complementarily to the drift zone and connected by at least one connecting zone to a channel zone, which is doped complementarily to the drift zone and isolates the drift zone from a first terminal zone of the same conductivity type as the drift zone. A control electrode is formed in a manner insulated from the channel zone.

REFERENCES:
patent: 5323059 (1994-06-01), Rutter et al.
patent: 5438215 (1995-08-01), Tihanyi
patent: 5510634 (1996-04-01), Okabe et al.
patent: 5572048 (1996-11-01), Sugawara
patent: 6037632 (2000-03-01), Omura et al.
patent: 6184555 (2001-02-01), Tihanyi et al.
patent: 6274904 (2001-08-01), Tihanyi
patent: 20010028083 (2001-10-01), Onishi et al.
patent: 43 09 764 (1994-09-01), None
patent: 101 00 802 (2002-08-01), None
patent: 0 879 481 (1998-11-01), None

Affiliated with

Also associated with

Rating

Compensation semiconductor component does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compensation semiconductor component, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compensation semiconductor component will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3455092