Method for forming Ta 2 O 5 dielectric layer by using in...

Details Method for forming Ta 2 O 5 dielectric layer by using in... Method for forming Ta 2 O 5 dielectric layer by using in...

2005-10-25

2005-10-25

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S240000, C438S778000

Reexamination Certificate

active

06958301

ABSTRACT:
A method for forming a Ta2O5dielectric layer by using an atomic layer deposition (ALD) method and an in-situ plasma treatment. The method includes steps of: a) depositing a Ta2O5dielectric layer on a substrate; b) performing a plasma treatment using N2O gas; c) repeating the steps of a) and b) at least one time; and d) annealing the Ta2O5dielectric layer for the crystallization of the Ta2O5dielectric layer.

REFERENCES:
patent: 6376299 (2002-04-01), Joo et al.
patent: 6461982 (2002-10-01), DeBoer et al.
patent: 2002/0086476 (2002-07-01), Kim et al.

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