Method of adjusting etch selectivity by adapting aspect...

Details Method of adjusting etch selectivity by adapting aspect... Method of adjusting etch selectivity by adapting aspect...

2005-11-29

2005-11-29

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S675000

Reexamination Certificate

active

06969676

ABSTRACT:
The present invention discloses a technique for controlling a local etch rate in forming multi-level contact openings, for example, in forming substrate contact openings and transistor contact openings of an SOI device. The aspect ratio dependent etch rate is correspondingly adapted by selecting in advance suitable aspect ratios for the contact openings so that the etch front may reach the respective final depth within a limited time interval.

REFERENCES:
patent: 5562801 (1996-10-01), Nulty
patent: 5892286 (1999-04-01), Toyoda et al.
patent: 5908320 (1999-06-01), Chu et al.
patent: 6472717 (2002-10-01), Jeng et al.
patent: 2002/0142526 (2002-10-01), Khare et al.
patent: 2004/0222465 (2004-11-01), Matsumoto et al.

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