Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-01
2005-02-01
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S306000, C257S310000, C438S240000, C438S253000, C438S396000
Reexamination Certificate
active
06849887
ABSTRACT:
A semiconductor device includes: a capacitor provided on a supporting substrate having an integrated circuit thereon and including a lower electrode, a dielectric film, and an upper electrode; a first interlayer insulating film provided so as to cover the capacitor; a first interconnect selectively provided on the first interlayer insulating film and electrically connected to the integrated circuit and the capacitor through a first contact hole formed in the first interlayer insulating film; a second interlayer insulating film formed of ozone TEOS and provided so as to cover the first interconnect; a second interconnect selectively provided on the second interlayer insulating film and electrically connected to the first interconnect through a second contact hole formed in the second interlayer insulating film; and a passivation layer provided so as to cover the second interconnect.
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Fujii Eiji
Judai Yuji
Kutsunai Toshie
Nagano Yoshihisa
Uemoto Yasuhiro
Díaz José R.
RatnerPrestia
Thomas Tom
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