Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-05-24
2005-05-24
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S591000, C438S633000, C438S287000
Reexamination Certificate
active
06897134
ABSTRACT:
A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, then forming a capping layer on the high-k gate dielectric layer. After oxidizing the capping layer to form a capping dielectric oxide on the high-k gate dielectric layer, a gate electrode is formed on the capping dielectric oxide.
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Barnak John P.
Brask Justin K.
Chau Robert S.
Doczy Mark L.
Intel Corporation
Seeley Mark V.
Smith Matthew
Yevsikov Victor V
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