Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2005-05-03

2005-05-03

Zarneke, David (Department: 2827)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S458000, C438S459000, C438S478000, C438S479000

Reexamination Certificate

active

06887770

ABSTRACT:
A polymer film including an adhesive layer, which can be peeled off with heat, is bonded to the upper surface of a semiconductor layer. Then, a KrF excimer laser light beam is applied to a surface of a substrate opposite to the semiconductor layer. This causes local heating at the laser spot, so that the bonding of atoms is cut off at the interface between the semiconductor layer and the substrate, thereby forming a thermal decomposition layer between the substrate and the semiconductor layer. Subsequently, the substrate is heated at a given temperature, so that the adhesive layer foams to lose its adhesive power. As a result, the polymer film is easily peeled off from the semiconductor layer.

REFERENCES:
patent: 5126921 (1992-06-01), Fujishima et al.
patent: 6372608 (2002-04-01), Shimoda et al.
patent: 6410368 (2002-06-01), Kawasaki et al.
patent: 6521511 (2003-02-01), Inoue et al.
patent: 6645830 (2003-11-01), Shimoda et al.
patent: 20020146893 (2002-10-01), Shimoda et al.
Michael K. Kelly et al., “Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff”, Japanese Journal of Applied Physics, vol. 38, Mar. 1, 1999, pp. L217-L219.
W.S. Wong et al., “Damage-Free Separation of GaN Thin Films from Sapphire Substrates”, Applied Physics Letters, vol. 72, Feb. 2, 1998, pp. 599-601.
W.S. Wong et al., “INxGa113Light Emitting Diodes on Si Substrates Fabricated by Pd-In Metal Bonding and Laser LiftOff”, Applied Physics, vol. 77, No. 18, Oct. 30, 2000, pp. 2822-2824.
W.S. Wong et al., “Continuous-Wave InGaN MQW Laser Diodes on Copper and Diamond Substrates”, Compound Semiconductor, vol. 7, Mar. 2001, pp. 47-49.

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