Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-02
2005-08-02
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21008, C257SE21293, C438S255000, C438S398000, C438S665000
Reexamination Certificate
active
06924523
ABSTRACT:
A semiconductor memory device includes a semiconductor substrate and a support layer provided above the semiconductor substrate. Particles are formed on the support layer. A first electrode is provided on the support layer such that it covers the particles. The first electrode has a first interface located opposite to the particles and being wavy in accordance with the pattern of the particles. A capacitor insulation film is provided on the first interface. The capacitor insulation film has a second interface located opposite to the first interface and being wavy in accordance with the shape of the first interface. A second electrode is provided on the capacitor insulation film.
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patent: 6159849 (2000-12-01), Kang et al.
patent: 9-153596 (1997-06-01), None
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patent: P2000-156476 (2000-06-01), None
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Aochi Hideaki
Sato Mitsuru
Yoshida Eiji
Frommer & Lawrence & Haug LLP
Nelms David
Tran Mai-Huong
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