Semiconductor device with source line having reduced...

Details Semiconductor device with source line having reduced... Semiconductor device with source line having reduced...

2005-03-08

2005-03-08

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S391000

Reexamination Certificate

active

06864548

ABSTRACT:
A semiconductor device, wherein the lowering, in comparison with a background art, of the resistance of a source line is achieved and a manufacturing method for the same are obtained.A protruding portion (2m) that protrudes in the Y direction towards each drain region (3m) from a trunk portion (1) is formed in a source line (SLa) in each of five memory cells corresponding to “1” of the ROM code from among eight memory cells belonging to the m-th row. In the same manner, a protruding portion (2n) that protrudes in the Y direction towards each drain region (3n) from the trunk portion (1) is formed in the source line (SLa) in each of four memory cells corresponding to “1” of the ROM code from among eight memory cells belonging to the n-th row.

REFERENCES:
patent: 4384345 (1983-05-01), Mikome
patent: 4707718 (1987-11-01), Sakai et al.
patent: 6-5877 (1994-01-01), None
patent: 6-21401 (1994-01-01), None

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