Non-volatile memory device

Details Non-volatile memory device Non-volatile memory device

2005-10-25

2005-10-25

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S327000, C257S347000, C257S618000

Reexamination Certificate

active

06958512

ABSTRACT:
A non-volatile memory device includes a substrate, an insulating layer, a fin, a conductive structure and a control gate. The insulating layer may be formed on the substrate and the fin may be formed on the insulating layer. The conductive structure may be formed near a side of the fin and the control gate may be formed over the fin. The conductive structure may act as a floating gate electrode for the non-volatile memory device.

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