Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2005-03-15

2005-03-15

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257S303000, C257S310000

Reexamination Certificate

active

06867451

ABSTRACT:
A semiconductor device comprises a lower electrode shaped as a convex formed on a semiconductor substrate having crystals, a grain boundary between adjacent crystals being perpendicular to a side of the lower electrode, a capacitor insulating film covering the lower electrode, and an upper electrode formed on the capacitor insulating film.

REFERENCES:
patent: 5567964 (1996-10-01), Kashihara et al.
patent: 5635420 (1997-06-01), Nishioka
patent: 5811333 (1998-09-01), Zenke
patent: 5943547 (1999-08-01), Yamamichi et al.
patent: 6335241 (2002-01-01), Hieda et al.
patent: 6451665 (2002-09-01), Yunogami et al.
Yamamichi et al., “An ECR MOCVD (Ba,Sr)TiO3Based Stacked Capacitor Technology with RuO2/Ru/TiN/TiSixStorage Nodes for Gbit-Scale DRAMs,” IEDM Technical Digest, pp. 119-112, Dec. 1995.

Affiliated with

Also associated with

Rating

Semiconductor device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3451072