Semiconductor device and liquid jetting device using the same

Details Semiconductor device and liquid jetting device using the same Semiconductor device and liquid jetting device using the same

2005-03-15

2005-03-15

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S133000

Reexamination Certificate

active

06867457

ABSTRACT:
A semiconductor device having a plurality of electrothermal conversion elements and a plurality of switching elements for flowing current through the electrothermal conversion elements, respectively formed on a semiconductor substrate of a first conductivity type, wherein each of the switching elements is an insulated gate field effect transistor including: a first semiconductor region of a second conductivity type opposite to the first conductivity type, the first semiconductor region being formed on a principal surface of the semiconductor substrate, a second semiconductor region of the first conductivity type for providing a channel region, the second semiconductor region being formed adjacent to the first semiconductor region, a source region of the second conductivity type formed in a surface layer of the second semiconductor region, a drain region of the second conductivity type formed in a surface layer of the first semiconductor region, and a gate electrode formed on a gate insulating film on the channel region, and a resistivity of the semiconductor substrate is 5 to 18 Ωcm, and the first semiconductor region has a depth of 2.0 to 2.2 μm along a depth direction of the semiconductor substrate and an impurity concentration of 1×1014to 1×1018/cm3.

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