Nonvolatile semiconductor memory device and method for...

Details Nonvolatile semiconductor memory device and method for... Nonvolatile semiconductor memory device and method for...

2005-09-27

2005-09-27

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257S317000, C257S318000, C257S319000, C257S320000, C257S321000, C257S324000, C438S201000, C438S211000, C438S128000, C438S262000

Reexamination Certificate

active

06949788

ABSTRACT:
A nonvolatile semiconductor memory device having MONOS type memory cells of increased efficiency by hot electron injection and improved scaling characteristics includes a channel forming region in the vicinity of a surface of a substrate, first and second impurity regions, acting as a source and a drain in operation, formed in the vicinity of the surface of the substrate sandwiching the channel forming region between them, a gate insulating film stacked on the channel forming region and having a plurality of films, and a charge storing means that is formed in the gate insulating film dispersed in the plane facing the channel forming region. A bottom insulating film includes a dielectric film that exhibits a FN type electroconductivity and makes the energy barrier between the bottom insulating film and the substrate lower than that between silicon dioxide and silicon.

REFERENCES:
patent: 6005270 (1999-12-01), Noguchi
patent: 6160297 (2000-12-01), Shimizu et al.
patent: 6313501 (2001-11-01), Kwon
patent: 6649972 (2003-11-01), Eitan
patent: 2001/0013621 (2001-08-01), Nakazato

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