Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2005-10-18
2005-10-18
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S417000, C257S418000, C257S419000, C257S420000, C438S455000
Reexamination Certificate
active
06956268
ABSTRACT:
The present invention relates to micro electro-mechanical systems (MEMS) and production methods thereof, and more particularly to vertically integrated MEMS systems. Manufacturing of MEMS and vertically integrated MEMS is facilitated by forming, preferably on a wafer level, plural MEMS on a MEMS layer selectively bonded to a substrate, and removing the MEMS layer intact.
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“Selective Wafer bonding by Surface Roughness Control” by C. Gui, et al. of Mesa+Research Institute, University of Twente, The Netherlands, Published in, The Journal of the Electrochemical Society vol. 48 No. (4) pp. 225-228 XP-00109843.
Crispino Ralph J.
Reveo Inc.
Tran Minh-Loan
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