MEMS and method of manufacturing MEMS

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation

Reexamination Certificate

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Details

C257S417000, C257S418000, C257S419000, C257S420000, C438S455000

Reexamination Certificate

active

06956268

ABSTRACT:
The present invention relates to micro electro-mechanical systems (MEMS) and production methods thereof, and more particularly to vertically integrated MEMS systems. Manufacturing of MEMS and vertically integrated MEMS is facilitated by forming, preferably on a wafer level, plural MEMS on a MEMS layer selectively bonded to a substrate, and removing the MEMS layer intact.

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patent: 6159824 (2000-12-01), Henley et al.
patent: 6486008 (2002-11-01), Lee
patent: 938129 (1999-08-01), None
patent: 2771852 (1999-06-01), None
International Search Report, PCT/US02/26090, Dec. 4, 2003.
“Selective Wafer bonding by Surface Roughness Control” by C. Gui, et al. of Mesa+Research Institute, University of Twente, The Netherlands, Published in, The Journal of the Electrochemical Society vol. 48 No. (4) pp. 225-228 XP-00109843.

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