Semiconductor memory device having potential amplitude of...

Details Semiconductor memory device having potential amplitude of... Semiconductor memory device having potential amplitude of...

2005-08-16

2005-08-16

Ho, Hoai (Department: 2827)

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

C365S154000, C365S189050

Reexamination Certificate

active

06930941

ABSTRACT:
A local sense amplifier drives a global bit line pair by potentials of data storage nodes when a global word line attains an H level. A global sense amplifier amplifies the potential difference of data storage nodes when a global sense enable signal attains an H level. The global sense enable signal is inverted by an inverter to be provided to a global word driver. When the global word line attains an L level by the global word driver, the local sense amplifier suppresses the drive of the global bit line pair.

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“A Scalable Performance 32b Microprocessor”, Lawrence T. Clark, et al., 2001 IEEE International Solid-State Circuits Conference, Feb. 6, 2001, pp. 230-231.

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