Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-10
2005-05-10
Gurley, Lynne A. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S640000, C438S658000, C438S660000, C438S663000, C438S666000, C438S669000, C438S672000, C438S673000, C438S687000, C438S701000, C438S720000, C438S742000
Reexamination Certificate
active
06890846
ABSTRACT:
Provided is a manufacturing method of a semiconductor device which comprises (a) depositing a first insulating film over a wafer, (b) forming an interconnect opening in the first insulating film, (c) forming, in the interconnect opening, an interconnect having a conductor film comprised mainly of copper, (d) forming a taper at a corner of said conductor film on the opening side of the interconnect opening, and (e) depositing a second insulating film over the first insulating film and interconnect. The present invention makes it possible to improve dielectric breakdown strength between interconnects each having a main conductor film comprised mainly of copper.
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Gurley Lynne A.
Miles & Stockbridge P.C.
Renesas Technology Corp.
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