Semiconductor device having a protruded active region,...

Details Semiconductor device having a protruded active region,... Semiconductor device having a protruded active region,...

2005-03-08

2005-03-08

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S903000

Reexamination Certificate

active

06864541

ABSTRACT:
A semiconductor device is provided with an SRAM memory cell. The semiconductor device includes a first gate-gate electrode layer, a second gate-gate electrode layer, a first drain-drain wiring layer, a second drain-drain wiring layer, a first drain-gate wiring layer and second drain-gate wiring layers. The first drain-gate wiring layer and an upper layer and a lower layer of the second drain-gate wiring layer are located in different layers, respectively. A first protruded active region is provided in a manner to protrude from an end portion of the first active region.

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U.S. Appl. No. 10/072,855, filed Feb. 6, 2002.
U.S. Appl. No. 10/072,618, filed Feb. 7, 2002.

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