Semiconductor memory cell configuration and a method for...

Details Semiconductor memory cell configuration and a method for... Semiconductor memory cell configuration and a method for...

2005-02-08

2005-02-08

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S302000, C257S774000, C438S242000, C438S243000, C438S386000

Reexamination Certificate

active

06853023

ABSTRACT:
A semiconductor memory cell configuration includes dynamic memory cells respectively having a trench capacitor and a vertical selection transistor, the memory cells being disposed in matrix form, the trench capacitors and the associated vertical selection transistors following one another in each case in the form of rows and/or columns.

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