Group III nitride semiconductor device and its method of...

Details Group III nitride semiconductor device and its method of... Group III nitride semiconductor device and its method of...

2005-05-17

2005-05-17

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C257S103000

Reexamination Certificate

active

06894323

ABSTRACT:
Disclosed is a Group III nitride semiconductor device comprising a stress-absorbing layer having: an amorphous silicon nitride layer, an aluminum interlayer, an amorphous aluminum nitride pre-layer and a polycrystalline Group III nitride layer containing aluminum. The stress-absorbing layer is located between a silicon substrate and a Group III nitride semiconductor, for alleviating stress resulted from different lattice constants between the Group III nitride substance and the silicon substrate, thereby preventing cracking of the Group III nitride semiconductor due to the stress. Further disclosed is a method of manufacturing Group III nitride semiconductor device.

REFERENCES:
patent: 6391748 (2002-05-01), Temkin et al.
patent: 6524932 (2003-02-01), Zhang et al.

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