Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-10-18
2005-10-18
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S150000, C438S163000, C438S166000, C257S071000
Reexamination Certificate
active
06955953
ABSTRACT:
A method of manufacturing a semiconductor with a storage capacitor having sufficient memory capacity while requiring a minimum area is provided. The method includes steps for manufacturing a storage capacitor of a pixel region that has a structure of a first storage capacitor and a second storage capacitor stacked on top of the other and connected in parallel with each other. The method further includes steps for forming the first storage capacitor having a first capacitance electrode formed in the same layer as a drain region, a first dielectric, and a second capacitance electrode formed in the same layer as a gate wiring. Still further, the method includes steps for forming the second storage capacitor including the second capacitance electrode, a second dielectric, and a third capacitance electrode formed in the same layer as a light-shielding film.
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Fukunaga Takeshi
Ikeda Takayuki
Yamazaki Shunpei
Costellia Jeffrey L.
Le Dung A.
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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