Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Patent
1996-07-24
1998-01-27
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
257345, 257399, 257400, 257652, H01L 2978, H01L 2358
Patent
active
057124922
ABSTRACT:
A checking transistor for checking selected regions a semiconductor substrate containing radiation-hardened semiconductor circuitry having a plurality of transistors according to the present invention comprises a source region of the other conductivity type and a drain region of the other conductivity type formed on the semiconductor substrate through the same fabrication steps as those used to fabricate usual transistors, a second impurity region of the one conductivity type formed between the source region and the drain region through the same fabrication steps as those used to fabricate the first impurity region, an oxide film formed on the source region, the drain region and the second impurity region, the oxide film having the same thickness as that of the second field oxide film, an insulating film provided on the oxide film, the insulating film having the same thickness as that of the interlayer insulating film and a gate. electrode provided on the insulating film.
REFERENCES:
patent: 4011581 (1977-03-01), Kubo et al.
patent: 4785343 (1988-11-01), Nezu
patent: 4974051 (1990-11-01), Matloubian et al.
patent: 5498894 (1996-03-01), Kokubun
Munson Gene M.
NEC Corporation
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