Ferroelectric memory having ferroelectric capacitor...

Details Ferroelectric memory having ferroelectric capacitor... Ferroelectric memory having ferroelectric capacitor...

2005-10-25

2005-10-25

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257S310000

Reexamination Certificate

active

06958508

ABSTRACT:
A capacitor upper electrode and a wiring are electrically connected to each other by using a plug and a conductive layer formed below a capacitive element without using a plug that directly connects the capacitor upper electrode to the wiring provided thereon via an interlayer insulating film therebetween. Alternatively, the capacitor upper electrode is covered by a conductive hydrogen barrier film, and the capacitor upper electrode and the wiring are electrically connected to each other via both a plug connecting the wiring and the conductive hydrogen barrier film to each other and the conductive hydrogen barrier film.

REFERENCES:
patent: 5567636 (1996-10-01), Jones, Jr.
patent: 5796133 (1998-08-01), Kwon et al.
patent: 6313539 (2001-11-01), Yokoyama et al.
patent: 6459111 (2002-10-01), Natori et al.
patent: 11-8355 (1999-01-01), None
patent: 11-121704 (1999-04-01), None

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