Semiconductor device having polycrystalline silicon load devices

Details Semiconductor device having polycrystalline silicon load devices Semiconductor device having polycrystalline silicon load devices

1995-04-10

1997-02-11

Tran, Minhloan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257380, 257536, 257538, H01L 2362

Patent

active

056024088

ABSTRACT:
A semiconductor device comprises a silicon semiconductor substrate and an insulating film formed on a surface of the silicon semiconductor substrate. One of a surface of the silicon semiconductor substrate or a surface of the insulating film is provided with at least one step portion. A polycrystalline silicon layer is formed uniformly on at least a side surface of the step portion and a top surface of the insulating film. The polycrystalline silicon layer which is formed on the side surface of the step portion comprises a resistance element, and a portion of the polycrystalline silicon layer which is formed on the top surface of the insulating film is doped with an impurity to form a conductive element. By this construction, the area occupied by the load devices on the semiconductor substrate is effectively reduced, thereby increasing the packing density of the semiconductor device.

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